MRF6S18100NBR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
100 nF Chip Capacitor (1206) 6.

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Datasheet Specifications

Part number: MRF6S18100NBR1
Manufacturer: Freescale Semiconductor
File Size: 744.16 KB
Datasheet: MRF6S18100NBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

Applications

* with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. www. datasheet4u. com MRF6S18100NR1 MRF6S18100NBR1 1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs GSM Application
* Typical GSM Performa

MRF6S18100NBR1 Distributors

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MRF6S18100NBR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S18100NBR1-like datasheet