Description
Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
100 nF Chip Capacitor (1206) 6.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
Applications
* with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. www. datasheet4u. com
MRF6S18100NR1 MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
GSM Application
* Typical GSM Performa
