MRF6S18100NR1, MRF6S18100NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S18100NR1 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S18100NR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S18100NR1** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S18100NR1, MRF6S18100NBR1
Manufacturer	Freescale Semiconductor
File Size	744.16 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S18100NBR1_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S18100NR1, MRF6S18100NBR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF6S18100NR1 datasheet.

MRF6S18100NR1 Product details

Description

100 nF Chip Capacitor (1206) 6.8 pF 600B Chip Capacitors 4.7 μF Chip Capacitors (1812) 0.3 pF 700B Chip Capacitor 1.3 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kΩ, 1/4 W Chip Resistors (1206) 10 Ω, 1/4 W Chip Resistor (1206) Part Number 1206C104KAT 600B6R8BW C4532X5R1H475MT 700B0R3BW 600B1R3BW 600B0R5BW 13661471 Manufacturer AVX ATC TDK ATC ATC ATC Philips MRF6S18100NR1 MRF6S18100NBR1 4 RF Device Data Freescale Semiconductor C14 R1 www.da

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Jun 10, 2009 |