Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* N Suffix Indicates Lead - Free
Applications
* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application
* Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts
CW, f = 1990 MHz Power Gain
* 15 dB Drain Efficiency - 50%
GSM EDGE Application
* T
