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OR-1001 Datasheet, Features, Application

OR-1001 infrared emitting diode

Shenzhen Orient Components Co ., Ltd OR-10XX ORI.

Taiwan Semiconductor

SFF1005GA - (SFF1001GA - SFF1008GA) 10.0AMPS Isolated Glass Passivated Super Fast Rectifier

CREAT BY ART SFF1001GA - SFF1008GA 10.0AMPS Isolated Glass Passivated Super Fast Rectifier ITO-220AB Features — — — — — — High efficiency, low VF Hi.
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Motorola Inc

MJ10015 - 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10015/D SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter.
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NXP

TDA1001BT - Interference and noise suppression circuit for FM receivers

INTEGRATED CIRCUITS DATA SHEET TDA1001B TDA1001BT Interference and noise suppression circuit for FM receivers Product specification File under Integr.
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SavantIC

MJ1000 - (MJ1000 / MJ1001) SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000/1001 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLIN.
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AOSONG

AM1001 - Temperature and Humidity Module Sensors

Temperature and Humidity Module AM1001 / AMT1001 Product Manual 1. Product Overview AM1001 / AMT1001 is humidity resistance type temperature and humi.
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Toshiba

2SC1001 - SILICON NPN TRANSISTOR

:) SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS FEATURES . Output Power : P =l. 2W(Min. (f=470MHz, VCC=12.6V, I»i=0.3W) U.
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Motorola Inc

MJ1001 - Medium-Power Complementary Silicon Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000/D Medium-Power Complementary Silicon Transistors . . . for use as output device.
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Motorola Inc

MJ10012 - 10 AMPERE POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10012/D NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–vo.
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Mospec Semiconductor

MJ10013 - Power Transistors

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Mospec Semiconductor

MJ10014 - Power Transistors

A A A A .
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Motorola Inc

MJ10016 - 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10015/D SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter.
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Mosel Vitelic Corp

V29C51001B - 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 128Kx8-bit Or.
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Mosel Vitelic Corp

V29C51001T - 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 128Kx8-bit Or.
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Mosel Vitelic

V29C31001B - (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY

www.DataSheet4U.com MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s .
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Mosel Vitelic

V29C31001T - (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY

www.DataSheet4U.com MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s .
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Taiwan Semiconductor Company

KBU1004 - (KBU1001 - KBU1007) Silicon Bridge Rectifiers

KBU1001 - KBU1007 www.DataSheet4U.com Single Phase 10 AMPS. Silicon Bridge Rectifiers KBU Features UL Recognized File # E-96005 High surge current c.
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NTC

SCK10-1001 - NTC Power Thermistor

w w w D .a S th c k e o r . e t NTC POWER THERMISTOR, SCK SERIES Meritek Thermal dissipation coefficient( δ ) The thermal dissipation coefficient is.
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Inchange Semiconductor

MJ10012T - Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGT.
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MaxBotix

MB1001 - High Performance Ultrasonic Proximity Parking Sensor

ParkSonar®-EZ Sensor Series ParkSonar®-EZ Series High Performance Ultrasonic Proximity Parking Sensor MB1001, MB1002, MB1005, MB1006, MB1007, MB1008.
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Advanced Semiconductor

LT1001A - NPN SILICON HIGH FREQUENCY TRANSISTOR

LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B ØA 45° C DESCRIPTION: E ØD The ASILT1001A is a High Frequency Transistor Desig.
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