P-2010 Datasheet | Specifications & PDF Download

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data 4.%  50 Features • Forward current: 1 x 20 and

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eGaN® FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EPC2010 EFFICIENT POWER CONVERS

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LM32010P Features n n 12 cm [4.7 ] QVGA format Black & white display n n Medium Size Graphic Type LCD Module High brightness (80 cd/m2) Mechanically

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Data Travo Flyback JF0601-19577 Tampak Bawah Skema Koneksi No. Pin 1 2 Fungsi H B+110 3 4 567 8 9 10 GND 180 NC HT NC ABL 12 -12 Digunakan

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ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MH

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > 60V  IC = 5A High Continuous Current  RSAT = 30mΩ for a

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LV20100FCT Rev.E Mar.-2016 / Descriptions TO-220F  。 Schottky Diode in a TO-220F Plastic Package. DATA SHEET / Features ，，。 Low forward voltage

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WSB20100T/WSB20100TF Power Schottky Barrier Rectifier Features  2x10A average rectified forward current  Low forward voltage and Low leakage current

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Plastic Film Capacitors Metallized Polypropylene Film Capacitor Type : ECWH(V) Designed for high frequency and pluse applications. ■ Features • Lo

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ACE2010M P-Channel -100V MOSFET Description The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(

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DATA SHEET GBP200~GBP2010 IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Plastic

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CYG20XX CybergateTM Features • Low distortion transformer signal coupling (0.01% max) • Complete ring detector circuit • Low power hookswitch • Electr

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V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low

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