P120 Datasheet | Specifications & PDF Download

3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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Standard Rectifier Phase leg Part number DMA10P1200UZ Marking on Product: MATMZP 1 4 3 DMA10P1200UZ VRRM I FAV VF = 2x 1200 V = 10 A = 1.27 V B

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SiC Power MOSFET MCB30P1200LB ID25 = 38 A VDSS = 1200 V R = DS(on) max 52 mΩ Part number MCB30P1200LB 7 T1 4 9 8 7 Itsoohlaeteadtsisnukrface

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NCP1200 PWM Current-Mode Controller for Low-Power Universal Off-Line Supplies Housed in SOIC−8 or PDIP−8 package, the NCP1200 represents a major leap

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ILOSAM ELECTRONICS CO., LTD. XY-14 SPECIFICATIONS: TYPE www.DataSheet4U.com FEATURES: Case: Black MPPO Pin: Tin-Plated Copper UNIT dB Vp-p Vp-p Hz m

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P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C

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NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON

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SavantIC Semiconductor Silicon NPN Darlington Power Transistors Product Specification TIP120/121/122 DESCRIPTION ·With TO-220C package ·DARLINGTON ·

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Rotary Potentiometer P120 Series Features: • 12 mm • Conductive plastic element • Single/dual unit • 100,000 cycle life • Insulated shaft • RoHS compl

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YMP120N06 N-Channel Enhancement Mode Power MOSFET Features ● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ； ● Low gate charge ● Low Crss (typ

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PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos

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NCP1207 PWM Current−Mode Controller for Free Running Quasi−Resonant Operation The NCP1207 combines a true current mode modulator and a demagnetizatio

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DATA SHEET www.onsemi.com PWM Current-Mode Controller for Free Running Quasi-Resonant Operation NCP1207A, NCP1207B The NCP1207A/B combines a true cur

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www.radiomuseum.org www.radiomuseum.org www.radiomuseum.org www.radiomuseum.org www.radiomuseum.org

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Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC NXH003P120M3F2PTHG The NXH

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VISIBLE DETECTOR CdS photoconductive cell Resin coating type (5R type) Standard type designed for general-purpose, wide application CdS photoconduc

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