P261 Datasheet | Specifications & PDF Download

Description The BP2616E is a high efficiency and high PF LED driver. The device operates in critical conduction mode and is suitable for universal inp

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Panel Potentiometer Model P260 / P261 Series Features: • 12.7 mm (1/2”) square rotary • Sealed / dust proof • 1,000,000 cycle life • Rotary switch op

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Static drain-source on-resistance: RDS(on) ≤ 2

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MP2617H Wide input Voltage, 3A, Switching Charger With NVDC Power Path Management For Single Cell Li+ Battery DESCRIPTION The MP2617H is a monolithic

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NIKO-SEM N-Channel Enhancement Mode P2610BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V

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P261AFEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -12V 20mΩ @VGS = -4.5V ID -32A PDFN 3x3P ABSOLUTE MAXI

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2610ADG TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26m

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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SN8P2614 Series 8-Bit Micro-Controller SN8P2614 USER’S MANUAL www.DataSheet4U.com Preliminary V 0.3 SN8P2614 SONiX 8-Bit Micro-Controller SONIX r

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www.DataSheet.in Monolithic Schottky Bridge Quad Diodes FEATURES Low Leakage High Breakdown Voltage Leadless Quad Package Low Inductance

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The Future of Analog IC Technology MP2615 2A, 1- or 2- Cell Li-ion Battery Charger In 3mm x 3mm Package DESCRIPTION The MP2615 is a high efficiency

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Description The BP2616C is a high efficiency and high PF LED driver. The device operates in critical conduction mode and is suitable for universal inp

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P2610BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ @VGS = 10V ID 36A TO-263 ABSOLUTE MAXIMUM RATINGS (TA =

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P2610ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26mΩ @VGS = 10V 31A TO-220F 100% UIS tested ABSOLUTE MA

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VP2614 VP2614 H.261 Video De-Multiplexer Supersedes version in June 1995 Digital Video & DSP IC Handbook, HB3923-2 DS3735 - 3.2 October 1996 FEATUR

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P261ALV Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -12V 19mΩ @VGS = -4.5V ID -8.5A SOP-8 ABSOLUTE MAXIMUM RATINGS

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P2610BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ @VGS = 10V ID 36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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www.DataSheet.in Monolithic Schottky Bridge Quad Diodes FEATURES Low Leakage High Breakdown Voltage Leadless Quad Package Low Inductance

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Advanced Power Electronics Corp. AP2613GYT-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Small Size

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