P6N70 Datasheet | Specifications & PDF Download

Sep 2012 PFP6N70E / PFF6N70E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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PFP6N70F / PFF6N70F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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  QFET  $ $ $ $ $ $ % &' ())* +
 , - . Ω / * , -) * 0      1     2) 3 0   1    

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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SSFP6N70 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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  QFET  $ $ $ $ $ $ % &' ())* +
 , - . Ω / * , -) * 0      1     2) 3 0   1    

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP6N70(

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HFP6N70U HFP6N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP6N70(

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SLP6N70U / SLF6N70U SLP6N70U/SLF6N70U 700V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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