SSP6N70A - Advanced Power MOSFET
SSP6N70A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source
