SSP60R099S2E 600V N-Channel Super-Junction MOSFET

Description

SSF60R099S2E/SSP60R099S2E 600V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF60R099S2E/SSP60R099S2E 600V N-Channel Super-Junction MOSFET Gen-Ⅱ Descriptio.
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lo.

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Datasheet Specifications

Part number: SSP60R099S2E
Manufacturer: Super Semiconductor
File Size: 722.18 KB
Datasheet: SSP60R099S2E-SuperSemiconductor.pdf
Description: 600V N-Channel Super-Junction MOSFET

Features

* Multi-Epi process SJ-FET
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 85mΩ
* Ultra Low Gate Charge (typ. Qg = 54nC)
* 100% avalanche tested SSF60R099S2E SSP60R099S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage

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SSP60R099S2E 600V N-Channel Super-Junction MOSFET Super Semiconductor

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