SSP60R099S2E - 600V N-Channel Super-Junction MOSFET
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs
SSP60R099S2E Features
* Multi-Epi process SJ-FET
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 85mΩ
* Ultra Low Gate Charge (typ. Qg = 54nC)
* 100% avalanche tested SSF60R099S2E SSP60R099S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage
