SSP6N80A - Advanced Power MOSFET

Fairchild

Datasheet Details

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ. ) 1 2 3 SSP6N80A BVDSS = 800 V RDS(on) = 2.0 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Cu.

📁 SSP6N80A Similar Datasheet

Other Datasheets by Fairchild

Published: Jul 6, 2005 |