SSP65R190S2E Datasheet (Super Semiconductor) - 650V N-Channel Super-Junction MOSFET

SSP65R190S2E, 650V N-Channel Super-Junction MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs

SSP65R190S2E Features

* Multi-Epi process SJ-FET

* 700V @TJ = 150 ℃

* Typ. RDS(on) = 150mΩ

* Ultra Low Gate Charge (typ. Qg = 31nC)

* 100% avalanche tested SSF65R190S2E SSP65R190S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage