SSP65R190S2E - 650V N-Channel Super-Junction MOSFET

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Datasheet Details

Part number: SSP65R190S2E
Manufacturer: Super Semiconductor
File Size: 762.74 KB
Datasheet: SSP65R190S2E-SuperSemiconductor.pdf
Description: 650V N-Channel Super-Junction MOSFET

SSP65R190S2E Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 150mΩ.
Ultra Low Gate Charge (typ. Qg = 31nC).
100% avalanche tested SSF65R190S2E SSP65R190S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-rep.

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Published: Jul 29, 2025 |