SSP65R600S2 650V N-Channel Super-Junction MOSFET

Description

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS *65R600S2 Rev.1.
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lo.

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Datasheet Specifications

Part number: SSP65R600S2
Manufacturer: Super Semiconductor
File Size: 1.02 MB
Datasheet: SSP65R600S2-SuperSemiconductor.pdf
Description: 650V N-Channel Super-Junction MOSFET

Features

* Multi-Epi process SJ-FET
* 700V @TJ = 150 ℃
* Typ. RDS(on) = 0.54Ω
* Ultra Low Gate Charge (typ. Qg = 11.8nC)
* 100% avalanche tested SSF65R600S2 SSP65R600S2 SSB65R600S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-S

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SSP65R600S2 650V N-Channel Super-Junction MOSFET Super Semiconductor

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