Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- Multi-Epi process SJ-FET.
- 700V @TJ = 150 ℃.
- Typ. RDS(on) = 115mΩ.
- Ultra Low Gate Charge (typ. Qg = 43nC).
- 100% avalanche tested
SSF65R130S2
SSP65R130S2
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS EAS IAS dv/dt
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche current, repetitive or not-repet.
SSP65R130S2-SUPER-SEMI.pdf