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PFP65R380 / PFF65R380 PFP65R380 / PFF65R380 FEATURES N-Channel Super Junction MOSFET  New technology for high voltage device  Low RDS(ON) and l

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PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

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PFP160N10S / PFB160N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara

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PFP65T360 / PFF65T360 PFP65T360 / PFF65T360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low cond

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M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

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PFP60R360 / PFF60R360 PFP60R360 / PFF60R360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low cond

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PFP150N08S / PFB150N08S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara

(11 views)

PFP70R900 / PFF70R900 FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge c

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PFP6N80 / PFF6N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

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PFP730E / PFF730E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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Aug 2006 PFP3N80 / PFF3N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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June 2007 PFP6N90 / PFF6N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

(9 views)

M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

(9 views)

M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

(9 views)

M16C/62P Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0241 Rev.2.41 Jan 10, 2006 1. Overview The M16C/62P Group (M16

(9 views)

PFP60R540 / PFF60R540 PFP60R540 / PFF60R540 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low cond

(9 views)

PFP830E / PFF5N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkab

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