PHOTOTRIAC Datasheet | Specifications & PDF Download

S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T g Taping reel type of S21MD8T is also available ( S21

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www.DataSheet4U.com PC3SD21NTZB Series PC3SD21NTZB Series s Features 1. Low zero-cross voltage (VOX[MAX.]=20V) 2. Isolation voltage between input an

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www.DataSheet4U.com VO2223 Vishay Semiconductors Power Phototriac FEATURES • • • • • • • • Maximum trigger current (IFT): 10 mA Isolation test volt

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S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T g Taping reel type of S21MD8T is also available ( S21

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S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T g Taping reel type of S21MD8T is also available ( S21

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www.DataSheet4U.com VO3052/VO3053 Vishay Semiconductors Optocoupler, Non Zero Crossing Phototriac, 1.5 kV/µs dV/dt, 600 V Features • 1500 V/µs dV/d

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6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK) MOC3061-M MOC3062-M PACKAGE MOC3063-M MOC3162-M MOC3163-M SCHEMATIC ANODE 1 6 MAI

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www.DataSheet.co.kr VO3062, VO3063 Vishay Semiconductors Phototriac, Zero Crossing, 1.5 kV/µs dV/dt, 600 V FEATURES • 1500 V/µs dV/dt minimum A 1 C

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www.DataSheet.co.kr VO3062, VO3063 Vishay Semiconductors Phototriac, Zero Crossing, 1.5 kV/µs dV/dt, 600 V FEATURES • 1500 V/µs dV/dt minimum A 1 C

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www.ct-micro.com CT3051-5L, CT3052-5L, CT3053-5L 600V Random Phase 5-Pin DMC-Isolator® Phototriac Optocoupler Features Description  High isolatio

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S2S4 Series ∗Non-zero cross type is also available. (S2S3 Series) S2S4 Series VDRM : 600V, Zero cross type Mini-Flat Package Phototriac Coupler for t

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PC3SD11NTZ Series ∗Zero cross type is also available. (PC3SD21NTZ Series) PC3SD11NTZ Series VDRM : 600V Non-zero cross type DIP 6pin Phototriac Coupl

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CT3010-5L, CT3011-5L, CT3012-5L CT3020-5L, CT3021-5L, CT3022-5L, CT3023-5L 250V/400V Random Phase 5-Pin Phototriac Optocoupler Features • High isolat

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S11MD4V/S11MD4T S11MD4V/S11MD4T s Features 1. Pin No. 5 completely molded for external noise resistance (S11MD4T ) 2. Dual-in-line package type (S11M

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S11MD4V/S11MD4T S11MD4V/S11MD4T s Features 1. Pin No. 5 completely molded for external noise resistance (S11MD4T ) 2. Dual-in-line package type (S11M

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S11MD5T/S21MD3TV/S21MD4TV S11MD5T/S21MD3TV/ S21MD4TV s Features 1. NO.5 pin completely sealed in the mold for external noise resistance 2. Built-in z

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S11MD5V S11MD5V .. s Features 1. Isolation voltage between input and output Viso : 5 000Vrms 2. High critical rate of rise of OFF-state voltage ( dV

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S11ME5/S11ME6/S21ME5/S21ME5F/S21ME6/S21ME6F S11ME5/S11ME6/S21ME5F S21ME5/S21ME6/S21ME6F s Features 1. Internal isolation distance : 0.4mm or more 2.

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S21MD3V S21MD3V .. s Features 1. High critical rate of rise of OFF-state voltage ( dv/dt : MIN. 500V/µ s ) 2. High repetitive peak OFF-state voltage

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