PM300 Datasheet | Specifications & PDF Download

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APM3009N N-Channel Enhancement Mode MOSFET Features • • • • 30V/70A , RDS(ON)=7mΩ(typ.) @ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V Super High Dense Adva

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PM300CBS060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Intellimod™ Module MAXISS Series™ Multi AXIS Servo IP

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PM300DVA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Intellimod™ Module Single Phase IGBT Inverter Output

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PM300 SERIES Single, dual and triple output Recommended for new design-ins • • • • • • Terminal strip connections Chassis mounted Split bobbin wound

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APM3005N N-Channel Enhancement Mode MOSFET Features Pin Description • 30V / 80A , RDS(ON)= 4mΩ(typ.) @ VGS= 10V RDS(ON)= 7mΩ(typ.) @ VGS= 4.5V • S

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WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET WPM3005 Http://www.sh-willsemi.com VDS (V) -30 Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V

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MITSUBISHI MITSUBISHI MODULES> PM300CSE060 PM300CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULAT

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APM3005NU N-Channel Enhancement Mode MOSFET Features • 30V/50A, RDS(ON)=4.5mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V www.DataSheet4U.com Pin

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APM3004NU Features • 30V/75A, RDS(ON)=3.3mΩ (typ.) @ VGS=10V RDS(ON)=4.5mΩ (typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Le

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WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.053@ VGS=̢10.0V 0.053@ VGS=̢10.0V 0.079@ VGS=̢4.5V 0.079@ VGS=̢4.5V

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PM300CSD060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Intellimod™ Module Three Phase IGBT Inverter Output 3

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www.DataSheet4U.com MITSUBISHI PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a) Adopting new 5th gen

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PM300CVA060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Intellimod™ Module Three Phase IGBT Inverter Output 3

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MITSUBISHI INTELLIGENT POWER MODULES PM300CVA060 FLAT-BASE TYPE INSULATED PACKAGE TERMINAL CODE 1. WFO 11. UP 2. VWPC 12. VUP1 3. WP 13. NC 14. FO 4

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APM3009NU N-Channel Enhancement Mode MOSFET Features • 30V/50A, RDS(ON)=7.5mΩ (typ.) @ VGS=10V RDS(ON)=11mΩ (typ.) @ VGS=4.5V • Super High Dense Cel

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Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/

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MITSUBISHI INTELLIGENT POWER MODULES PM300DSA060 FLAT-BASE TYPE INSULATED PACKAGE N SIDE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO P SIDE 1. VP1 2. SPR 3. C

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