
PTAB182002FC - Thermally-Enhanced High Power RF LDMOS FET
PTAB182002FC
Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz
Description
The PTAB182002FC is a 190-watt LDMOS FET intended f
Rating:
1
★
(2 votes)