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PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC Description

PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 * 1880 MHz .
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency ba.

PTAB182002FC Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 28 V, IDQ

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Datasheet Details

Part number
PTAB182002FC
Manufacturer
Wolfspeed
File Size
381.22 KB
Datasheet
PTAB182002FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET

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Thermally-Enhanced High Power LDMOS FET Wolfspeed
Wolfspeed PTAB182002FC-like datasheet