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PTAB182002FC

Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 28 V, IDQ

PTAB182002FC Datasheet (381.22 KB)

Preview of PTAB182002FC PDF

Datasheet Details

Part number:

PTAB182002FC

Manufacturer:

Wolfspeed

File Size:

381.22 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTAB182002FC Thermally-Enhanced High Power LDMOS FET Wolfspeed

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