PTAC210802FC - Thermally-Enhanced High Power RF LDMOS FET

Wolfspeed

The PTAC210802FC by Wolfspeed is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET by Wolfspeed - Datasheet Preview — Official preview page of the **PTAC210802FC** Thermally-Enhanced High Power RF LDMOS FET datasheet (Wolfspeed).

Datasheet Details

Part number	PTAC210802FC
Manufacturer	Wolfspeed
File Size	609.47 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTAC210802FC-Wolfspeed.pdf
Additional preview pages of the PTAC210802FC datasheet.

PTAC210802FC Product details

Description

The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

Features

include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture 19 55 Efficiency 18 50 17 45 16 Gain 40 15 35 14 3.

📁 PTAC210802FC Similar Datasheet

PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTAC260302SC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTA07N65B - 650V N-ch Planar MOSFET (PIP)
PTA07N80 - 800V N-Channel MOSFET (PIP)
PTA10N80 - 800V N-Channel MOSFET (PIP)
PTA1543 - Low Profile Slide Potentiometer (Bourns)
PTA2043 - Low Profile Slide Potentiometer (Bourns)

Other Datasheets by Wolfspeed

PTAB182002FC - Thermally-Enhanced High Power RF LDMOS FET

Published: May 1, 2019 |