logo

PTFA220081M Datasheet, Features, Application

PTFA220081M High Power RF LDMOS Field Effect Transistor

PTFA220081M Confidential, Limited Internal Distri.

Infineon
rating-1 3

PTFA220081M - High Power RF LDMOS Field Effect Transistor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts