PTFB183408SV High Power RF LDMOS Field Effect Tra.
Infineon Technologies
PTFB183408SV - High Power RF LDMOS Field Effect Transistor
PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended .