PTFB210801FA Thermally-Enhanced High Power RF LDM.
Infineon
PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in mu.
