Infineon
PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTFB210801FA LDMOS FET is designed for use in mu
Rating:
1
★
(3 votes)
