PTFB213004F High Power RF LDMOS Field Effect Tran.
Infineon
PTFB213004F - High Power RF LDMOS Field Effect Transistor
PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for clas.
