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PTFB213004F High Power RF LDMOS Field Effect Transistor

PTFB213004F Description

PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 * 2170 MHz .
The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.

PTFB213004F Features

* include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz ba

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High Power LDMOS Field Effect Transistor Infineon
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