Part number:
PTFB213004F
Manufacturer:
File Size:
395.40 KB
Description:
High power rf ldmos field effect transistor.
PTFB213004F Datasheet (395.40 KB)
* include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz ba
PTFB213004F Datasheet (395.40 KB)
PTFB213004F
395.40 KB
High power rf ldmos field effect transistor.
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