Datasheet Specifications
- Part number
- PTFB213004F
- Manufacturer
- Infineon ↗
- File Size
- 395.40 KB
- Datasheet
- PTFB213004F-Infineon.pdf
- Description
- High Power RF LDMOS Field Effect Transistor
Description
PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 * 2170 MHz .Features
* include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz baPTFB213004F Distributors
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