PTFB213004F Datasheet, Transistor, Infineon

PTFB213004F Features

• Transistor include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%)

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PTFB213004F

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Infineon ↗

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📄 Datasheet

Description:

High power rf ldmos field effect transistor. The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequenc

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PTFB213004F

Infineon

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