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PTFB213208FV Thermally-Enhanced High Power RF LDMOS FET

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Description

PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 * 2170 MHz .
The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency ban.

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Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%)

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PTFB213208FV Thermally-Enhanced High Power LDMOS FET Infineon
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