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PTFB213208FV

Thermally-Enhanced High Power RF LDMOS FET

PTFB213208FV Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%)

PTFB213208FV Datasheet (222.91 KB)

Preview of PTFB213208FV PDF

Datasheet Details

Part number:

PTFB213208FV

Manufacturer:

Infineon ↗

File Size:

222.91 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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TAGS

PTFB213208FV Thermally-Enhanced High Power LDMOS FET Infineon

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