PTFB213208FV - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTFB213208FV
Manufacturer	Infineon
File Size	222.91 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFB213208FV Datasheet
Additional preview pages of the PTFB213208FV datasheet.

Product details

Description

The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2110 to 2170 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 IMD Up -35 30 25 -40 IMD Low -45 -50 -55 20.

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Published: Nov 27, 2016 |