FEATURES Access Times of 150, 200, 250 and 350ns .
PYRAMID
PYA28C16B - EEPROM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Acti.
PYRAMID
PYA28C16 - EEPROM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur.