PYA28C16B Datasheet, eeprom equivalent, PYRAMID

PYA28C16B Features and benefits

PYA28C16B Description

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📁 Related Datasheet

PYA28C16 - EEPROM (PYRAMID)
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur.

PYA28C010 - EEPROM (PYRAMID)
FEATURES Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current.

PYA28C256 - EEPROM (PYRAMID)
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current .

PYA28C64 - EEPROM (PYRAMID)
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur.

PYA28C64B - STATIC CMOS RAM (PYRAMID)
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current .

PYA28HC256 - STATIC CMOS RAM (PYRAMID)
FEATURES Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 m.

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