.
Pan Jit International
BC547C - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.
Pan Jit International
UF302 - ULTRAFAST SWITCHING RECTIFIER
UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator.
Pan Jit International
PJ4N3KDW - 30V Dual N-Channel MOSFET
PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Adva.
Pan Jit International
F8N60 - PJF8N60
PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switc.
Pan Jit International
BC546B - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.
Pan Jit International
MBR5H150SS - ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features Plastic package has Underwriters Laboratory Fl.
Pan Jit International
PJD10P10A - 100V P-Channel Enhancement Mode MOSFET
PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), VGS@-4.5V,ID@-.
Pan Jit International
BC548B - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.
Pan Jit International Inc.
1.00E+01 - SUPERFAST RECOVERY RECTIFIERS
1E1 THRU 1E5 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES l Superfast recovery times-epitaxial construction l.
Pan Jit International Inc.
1.00E+03 - SUPERFAST RECOVERY RECTIFIERS
1E1 THRU 1E5 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES l Superfast recovery times-epitaxial construction l.
Pan Jit International Inc.
1.00E+04 - SUPERFAST RECOVERY RECTIFIERS
1E1 THRU 1E5 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES l Superfast recovery times-epitaxial construction l.
Pan Jit International Inc.
1.00E+02 - SUPERFAST RECOVERY RECTIFIERS
1E1 THRU 1E5 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES l Superfast recovery times-epitaxial construction l.
Pan Jit International
PS204 - PLASTIC SILICON RECTIFIER
DATA SHEET PS200~PS2010 PLASTIC SILICON RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Low cost • High current capability • Plast.
Pan Jit International
09N03 - PJD09N03
www.DataSheet.co.kr PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ •.
Pan Jit International
PJT7838 - 50V N-Channel MOSFET
PPJT7838 50V N-Channel Enhancement Mode MOSFET Voltage 50 V Current 400mA Features RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) , VGS@4.5V, ID@.
Pan Jit International
UF3010 - ULTRAFAST SWITCHING RECTIFIER
UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator.
Pan Jit International
F12N65 - 650V N-CHANNEL MOSFET
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low.
Pan Jit International Inc.
1.00E+05 - SUPERFAST RECOVERY RECTIFIERS
1E1 THRU 1E5 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES l Superfast recovery times-epitaxial construction l.
Pan Jit International
UF2010 - ULTRAFAST SWITCHING RECTIFIER
UF200 THRU UF2010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES l Plastic package has Underwriters Laborator.
Pan Jit International
06N03 - 25V N-Channel MOSFET
PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench proce.