Photo-MOS Datasheet | Specifications & PDF Download

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DPOUSPM ķ 1 + 2 ķ 3 ķ ZC 4 ķ 8 1 + 2 ķ 6 3 ķ 5 4 Zero-cross ci

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DPOUSPM ķ 1 + 2 ķ 3 ķ ZC 4 ķ 8 1 + 2 ķ 6 3 ķ 5 4 Zero-cross ci

(54 views)

PC923 PC923 s Features 1. Built-in direct drive circuit for MOS-FET/ IGBT drive ( IO1P , I O2P : 0.4A) 2. High speed response ( t PLH , t PHL : MAX.

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Slim type with high capacity up to 4A DC load type also available Power 1 Form A (AQZ10❍, 20❍) 21 .827 3.5 .138 12.5 .492 (Height includes standof

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GU-E 1 Form A (AQY21EH) High cost-performance DIP4-pin type with reinforced insulation AQY21EH GU-E 1 Form A (AQY21EH) FEATURES 4.78 .188 6.4 .25

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PC929 PC929 s Features 1. Built-in IGBT shortcircuit protector circuit 2. Built-in direct drive circuit for IGBT drive (Peak output current IO1P,

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DIP6-pin type, reinforced insulation available GE 1 Form A (AQV21❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes s

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High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. FEATURES 21 .827 3.5 .138 12.5 .492 Power PhotoMOS (AQZ10❍, 20❍) TYPI

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Max. high capacity 10A in a slim SIL package Power 1 Form A DC High Capacity (AQZ19❍) 24.5 .965 4.5 .177 20.5 .807 Height includes standoff mm i

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Miniature SOP6-pin type with high capacity of 3.3A load current HE SOP 1 Form A High Capacity (AQV25❍G3S) 6.3 .248 4.4 .173 2.1 .083 mm inch 16 2

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PhotoMOS HE 1 Form A Ideal for industrial battery monitoring system (BMS) 8.8 6.4 8.8 6.4 3.9 3.6 (Height includes standoff) + 16 234 FEATURES Load

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Miniature SOP6-pin type of 60 to 600V load voltage GU SOP 1 Form A (AQV21❍S) 6.3 .248 4.4 .173 2.1 .083 mm inch 16 25 34 RoHS compliant FEATUR

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Normally closed type with reinforced insulation (AQV410EH, 414EH) (AQV412EH) GE 1 Form B (AQV41❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252

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Miniature SOP4-pin type of 60V/350V/400V load voltage GU SOP 1 Form A (AQY21❍S) 4.3 4.4 .169 .173 2.1 .083 mm inch 14 23 RoHS compliant FEATURES 1

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DPOUSPM ķ 1 + 2 ķ 3 ķ ZC 4 ķ 8 1 + 2 ķ 6 3 ķ 5 4 Zero-cross ci

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FDA117 13.3V, 9.1μA Photovoltaic MOSFET Driver Key Attributes Characteristic Open Circuit Voltage (IF=5mA) Short Circuit Current (IF = 5mA) Input to

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Both 1 Form A and 1 Form B contacts incorporated in a compact DIP8-pin HE 1 Form A & 1 Form B with low on-resistance (AQW654) 9.78 .385 6.4 .252

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POWER PhotoMOS RELAYS (Voltage Sensitive Type) PhotoMOS RELAYS 4. Both AC/DC dual types and DC-only types are available The AC/DC dual type is capabl

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POWER PhotoMOS RELAYS (Voltage Sensitive Type) PhotoMOS RELAYS 4. Both AC/DC dual types and DC-only types are available The AC/DC dual type is capabl

(16 views)

4PMJE
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3&- :4 $PNQBDU
%*1
UZQF
443
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DPOUSPM ķ 1 + 2 ķ 3 ķ ZC 4 ķ 8 1 + 2 ķ 6 3 ķ 5 4 Zero-cross ci

(16 views)