Pyramid Datasheet | Specifications & PDF Download

FEATURES EPROM Technology for reprogramming High Speed – 25/35/45/55 ns (Commercial) – 25/35/45/55 ns (Military) Low Power Operation: – 66

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RH5050_SPEC IC RH5050 Revision 1.3 2011-12-30 RH5050_SPEC_Ve1.3 1/10 12/30/2011 RH5050_SPEC 1.

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FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur

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FEATURES Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 m

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FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 4.9ns max (MIL) Output levels compatible with TTL and CMO

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FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 5.1ns max (MIL) Output levels compatible with TTL and CMO

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P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

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FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur

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FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current

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FEATURES Access Times of 70, 90, and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 200

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FEATURES EPROM Technology for reprogramming High Speed – 25/35/45/55 ns (Commercial) – 25/35/45/55 ns (Military) Low Power Operation: – 66

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FEATURES Full CMOS High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 12/15/20/25 ns (Industrial) – 25/35/45/55/70 ns

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FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Acti

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FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 4.9ns max (MIL) Output levels compatible with TTL and CMO

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PY291A 2K x 8 rEpROGRAMMABLE prom FEATURES EPROM Technology for reprogramming High Speed – 20/25/35/50 ns (Commercial) – 25/35/50 ns (Industr

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PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 m

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P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (C

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 12/15/20/25/35 ns (Industrial) –

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P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45/

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