Q62 Datasheet | Specifications & PDF Download

PNP Silicon AF Transistors BC 856 BC 860 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter

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BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ) T

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PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

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NPN Silicon AF Transistor BC 846 W BC 850 W Features q q q q q For AF input stages and driver applications High current gain Low collector-emit

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NPN Silicon AF Transistor BC 846 W BC 850 W Features q q q q q For AF input stages and driver applications High current gain Low collector-emit

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PNP Silicon AF Transistors BC 856W BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitt

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BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10

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BCP 54M BCP 56M NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage •

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PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types

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PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low f

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Silicon Schottky Diodes q q q BAT 14- … 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to

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P-Channel 20-V (D-S) MOSFET  DTQ6203 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.0019 at VGS = - 10 V 0.0021 at VGS = - 4.5 V ID

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semi

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FETek Technology Corp. FKQ6208 Dual N-Ch 60V Fast Switching MOSFETs  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decli

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E-pHEMT MMIC Product Features • Small size (4 x 4 mm) • High gain • High linearity • Low cost • Low Noise Figure • 30dB AGC Range • Pb-free/RoHS compl

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E-pHEMT MMIC Product Features • Small size (4 x 4 mm) • High gain • High linearity • Low cost • Low Noise Figure • 30dB AGC Range • Pb-free/RoHS compl

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N-Channel 20 V (D-S) MOSFET DTQ6200B www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.0019 at VGS = 4.5 V 0.0023 at VGS = 2.5 V ID (A)a, e

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 P-Channel 20-V (D-S) MOSFET DTQ6203B www.din-tek.jp PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.0029 at VGS = - 10 V 0.0033 at VGS = - 4.5 V I

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