
QPD0005M - GaN RF Transistor
QPD0005M
®
8 W, 48 V, 2.5 – 5.0 GHz, GaN RF Transistor
Product Overview
The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmol
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QPD0005M ® 8 W, 48 V, 2.5 – 5.0 GHz, GaN RF T.
QPD0005M Distributor