Datasheet4U Logo Datasheet4U.com

QPD0005M Datasheet - Qorvo

GaN RF Transistor

QPD0005M Features

* Operating Frequency Range: 2.5

* 5.0 GHz

* Operating Drain Voltage: +48 V

* Maximum Output Power (PSAT): 39.1 dBm (1)

* Maximum Drain Efficiency: 71.4% (1)

* Efficiency-Tuned P3dB Gain: 17.8 dB (1)

* 4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.6 GHz Functiona

QPD0005M General Description

Short Reel * 100 Pieces 3.4 * 3.6 GHz Evaluation Board 3.2 * 3.8 GHz Evaluation Board 3.7 * 4.0 GHz Evaluation Board 2.5 * 2.7 GHz Evaluation Board Data Sheet Rev. B, December 2021 Subject to change without notice | All rights reserved 1 of 16 www.qorvo.com.

QPD0005M Datasheet (1.60 MB)

Preview of QPD0005M PDF

Datasheet Details

Part number:

QPD0005M

Manufacturer:

Qorvo

File Size:

1.60 MB

Description:

Gan rf transistor.
QPD0005M ® 8 W, 48 V, 2.5 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic.

📁 Related Datasheet

QPD0012 Asymmetric Doherty (Qorvo)

QPD0030 RF Power Transistor (TriQuint Semiconductor)

QPD0030 GaN RF Power Transistor (qorvo)

QPD0050 RF Power Transistor (TriQuint Semiconductor)

QPD0305 Dual GaN RF Transistor (Qorvo)

QPD1003 GaN RF IMFET (Qorvo)

QPD1006 RF IMFET (Qorvo)

QPD1011 7W GaN RF Input-Matched Transistor (Qorvo)

QPD1013 GaN RF Transistor (Qorvo)

QPD1018 GaN RF IMFET (qorvo)

TAGS

QPD0005M GaN Transistor Qorvo

Image Gallery

QPD0005M Datasheet Preview Page 2 QPD0005M Datasheet Preview Page 3

QPD0005M Distributor