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QPD0005M

GaN RF Transistor

QPD0005M Features

* Operating Frequency Range: 2.5

* 5.0 GHz

* Operating Drain Voltage: +48 V

* Maximum Output Power (PSAT): 39.1 dBm (1)

* Maximum Drain Efficiency: 71.4% (1)

* Efficiency-Tuned P3dB Gain: 17.8 dB (1)

* 4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.6 GHz Functiona

QPD0005M General Description

Short Reel

* 100 Pieces 3.4

* 3.6 GHz Evaluation Board 3.2

* 3.8 GHz Evaluation Board 3.7

* 4.0 GHz Evaluation Board 2.5

* 2.7 GHz Evaluation Board Data Sheet Rev. B, December 2021 Subject to change without notice | All rights reserved 1 of 16 www.qorvo.com.

QPD0005M Datasheet (1.60 MB)

Preview of QPD0005M PDF

Datasheet Details

Part number:

QPD0005M

Manufacturer:

Qorvo

File Size:

1.60 MB

Description:

Gan rf transistor.
QPD0005M ® 8 W, 48 V, 2.5

* 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic.

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QPD0005M GaN Transistor Qorvo

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