QPD0005M GaN RF Transistor

Qorvo

Description

QPD0005M ® 8 W, 48 V, 2.5 * 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic.
Short Reel. 100 Pieces 3. 3. 3. 4.

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Datasheet Specifications

Part number: QPD0005M
Manufacturer: Qorvo
File Size: 1.60 MB
Datasheet: QPD0005M-Qorvo.pdf
Description: GaN RF Transistor

Features

* Operating Frequency Range: 2.5
* 5.0 GHz
* Operating Drain Voltage: +48 V
* Maximum Output Power (PSAT): 39.1 dBm (1)
* Maximum Drain Efficiency: 71.4% (1)
* Efficiency-Tuned P3dB Gain: 17.8 dB (1)
* 4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.6 GHz Functiona

Applications

* WCDMA / LTE
* Macrocell Base Station
* Microcell Base Station
* Small Cell
* Active Antenna
* 5G Massive MIMO

QPD0005M Distributors

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QPD0005M GaN Transistor Qorvo

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