QPD0005M
Qorvo
1.60MB
Gan rf transistor. Short Reel – 100 Pieces 3.4 – 3.6 GHz Evaluation Board 3.2 – 3.8 GHz Evaluation Board
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📁 Related Datasheet
QPD0012 - Asymmetric Doherty
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QPD0012
® 20 W / 40 W, 48 V, 2.5 – 2.7 GHz, Asymmetric Doherty Transistor
Product Overview
The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN.
QPD0030 - RF Power Transistor
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Applications
• W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.
QPD0030 - GaN RF Power Transistor
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QPD0030
®
45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor
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The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o.
QPD0050 - RF Power Transistor
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Applications
• W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.
QPD0305 - Dual GaN RF Transistor
(Qorvo)
QPD0305
® 2x20 W, 48 V, 3.4 – 3.8 GHz, Dual GaN RF Transistor
Product Overview
The QPD0305 is a dual-path GaN power amplifier in a DFN package which .
QPD1003 - GaN RF IMFET
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QPD1003
500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
QPD1006 - RF IMFET
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QPD1006
450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
QPD1011 - 7W GaN RF Input-Matched Transistor
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QPD1011
30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched
discrete GaN on.
QPD1013 - GaN RF Transistor
(Qorvo)
QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
General Description
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates fr.
QPD1018 - GaN RF IMFET
(qorvo)
QPD1018
500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET
Product Overview
The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.