QPD0012 Datasheet, Doherty, Qorvo

QPD0012 Features

• Doherty
• Operating Frequency Range: 2.5
    – 2.7 GHz
• Operating Drain Voltage: +48 V
• Peak Doherty Output Power: 47.3 dBm
• Doherty Drain Efficie

PDF File Details

Part number:

QPD0012

Manufacturer:

Qorvo

File Size:

935.97kb

Download:

📄 Datasheet

Description:

Asymmetric doherty. 7” Reel   – 100 Pieces Production Evaluation Board Kit 1 of 9 www.qorvo.com QPD0012 ® 20 W / 40 W, 48 V, 2.5 &

QPD0012 Application

• Applications
• 5G Massive MIMO
• WCDMA / LTE
• Microcell Base Station
• Small Cell
• Active Antenna

TAGS

📁 Related Datasheet

QPD0005M - GaN RF Transistor (Qorvo)
QPD0005M ® 8 W, 48 V, 2.5 – 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmol.

QPD0030 - RF Power Transistor (TriQuint Semiconductor)
Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.

QPD0030 - GaN RF Power Transistor (qorvo)
QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o.

QPD0050 - RF Power Transistor (TriQuint Semiconductor)
Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.

QPD0305 - Dual GaN RF Transistor (Qorvo)
QPD0305 ® 2x20 W, 48 V, 3.4 – 3.8 GHz, Dual GaN RF Transistor Product Overview The QPD0305 is a dual-path GaN power amplifier in a DFN package which .

QPD1003 - GaN RF IMFET (Qorvo)
QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.

QPD1006 - RF IMFET (Qorvo)
QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.

QPD1011 - 7W GaN RF Input-Matched Transistor (Qorvo)
QPD1011 30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched discrete GaN on.

QPD1013 - GaN RF Transistor (Qorvo)
QPD1013 150W, 65V, DC – 2.7 GHz, GaN RF Transistor General Description The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates fr.

QPD1018 - GaN RF IMFET (qorvo)
QPD1018 500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET Product Overview The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.