QPD0005M - GaN RF Transistor
(Qorvo)
QPD0005M
®
8 W, 48 V, 2.5 – 5.0 GHz, GaN RF Transistor
Product Overview
The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmol.
QPD0030 - RF Power Transistor
(TriQuint Semiconductor)
Applications
• W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.
QPD0030 - GaN RF Power Transistor
(qorvo)
QPD0030
®
45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor
Product Overview
The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o.
QPD0050 - RF Power Transistor
(TriQuint Semiconductor)
Applications
• W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.
QPD0305 - Dual GaN RF Transistor
(Qorvo)
QPD0305
® 2x20 W, 48 V, 3.4 – 3.8 GHz, Dual GaN RF Transistor
Product Overview
The QPD0305 is a dual-path GaN power amplifier in a DFN package which .
QPD1003 - GaN RF IMFET
(Qorvo)
QPD1003
500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
QPD1006 - RF IMFET
(Qorvo)
QPD1006
450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
QPD1011 - 7W GaN RF Input-Matched Transistor
(Qorvo)
QPD1011
30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched
discrete GaN on.