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QPD1006 RF IMFET

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Description

QPD1006 450W, 50V, 1.2 * 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
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Datasheet Specifications

Part number
QPD1006
Manufacturer
Qorvo
File Size
643.52 KB
Datasheet
QPD1006-Qorvo.pdf
Description
RF IMFET

Features

* Frequency: 1.2 to 1.4 GHz
* Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed)
* Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed)
* Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed)
* Operating Voltage: 45 V (CW), 50 V (Pulsed)
* Low thermal resistance package

Applications

* Military radar

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