QPD1006 Datasheet - Qorvo

QPD1006 RF IMFET

1.2 * 1.4 GHz RF IMFET Evaluation Board Datasheet Rev. D, July 16, 2018 | Subject to change without notice - 1 of 16 - www.qorvo.com QPD1006 450W, 50V, 1.2 * 1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Vo.

QPD1006 450W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram NI-50CW Key Fe.

QPD1006 Features

* Frequency: 1.2 to 1.4 GHz

* Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed)

* Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed)

* Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed)

* Operating Voltage: 45 V (CW), 50 V (Pulsed)

* Low thermal resistance package

QPD1006-Qorvo.pdf