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QPD1006 Datasheet - Qorvo

RF IMFET

QPD1006 Features

* Frequency: 1.2 to 1.4 GHz

* Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed)

* Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed)

* Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed)

* Operating Voltage: 45 V (CW), 50 V (Pulsed)

* Low thermal resistance package

QPD1006 General Description

1.2   * 1.4 GHz RF IMFET Evaluation Board Datasheet Rev. D, July 16, 2018 | Subject to change without notice - 1 of 16 - www.qorvo.com QPD1006 450W, 50V, 1.2 * 1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Vo.

QPD1006 Datasheet (643.52 KB)

Preview of QPD1006 PDF

Datasheet Details

Part number:

QPD1006

Manufacturer:

Qorvo

File Size:

643.52 KB

Description:

Rf imfet.
QPD1006 450W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT whi.

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