QPD1013 Datasheet, Transistor, Qorvo

QPD1013 Features

• Transistor
• Frequency: DC to 2.7 GHz
• Output Power (P3dB): 178 W1
• Linear Gain: 21.8 dB1
• Typical PAE3dB: 64.8 %1
• Operating Voltage: 65 V
• Lo

PDF File Details

Part number:

QPD1013

Manufacturer:

Qorvo

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2.31MB

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📄 Datasheet

Description:

Gan rf transistor. The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched powe

QPD1013 Application

• Applications from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package. Lead-free and ROHS compliant E

TAGS

QPD1013

Qorvo

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