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QPD1013 - GaN RF Transistor

Qorvo

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Datasheet Details

Part number: QPD1013
Manufacturer: Qorvo
File Size: 2.31 MB
Datasheet: QPD1013-Qorvo.pdf
Description: GaN RF Transistor

QPD1013 Product details

Description

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz..

Features

Frequency: DC to 2.7 GHz.
Output Power (P3dB): 178 W1.
Linear Gain: 21.8 dB1.
Typical PAE3dB: 64.8 %1.
Operating Voltage: 65 V.
Low thermal resistance package.
CW and Pulse capable.
7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull).

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GaN Transistor Qorvo

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