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QPD1019 Datasheet - Qorvo

GaN RF IMFET

QPD1019 Features

* Frequency: 2.9 to 3.3 GHz

* Output Power (P3dB)1: 590 W

* Linear Gain1: 15.5 dB

* Typical DE3dB1: 69%

* Operating Voltage: 50 V

* Low thermal resistance package

* Pulse capable Notes: 1. @ 3.1 GHz Applications

* Military Radar

QPD1019 General Description

Waffle Pack of 18 QPD1019 2.9 * 3.3 GHz EVB Data Sheet Rev. D, August 2022 Subject to change without notice. | All rights reserved 1 of 17 www.qorvo.com QPD1019 ® 500 W, 50 V, 2.9 * 3.3 GHz, GaN RF IMFET Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage (BV.

QPD1019 Datasheet (1.14 MB)

Preview of QPD1019 PDF

Datasheet Details

Part number:

QPD1019

Manufacturer:

Qorvo

File Size:

1.14 MB

Description:

Gan rf imfet.
QPD1019 ® 500 W, 50 V, 2.9 3.3 GHz, GaN RF IMFET Product Overview The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEM.

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QPD1019 GaN IMFET Qorvo

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