Description
Waffle Pack of 18 QPD1019 2.9
3.3 GHz EVB
Data Sheet Rev.D, August 2022 Subject to change without notice.| All rights reserved
1 of 17
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QPD1019
®
500 W, 50 V, 2.9
3.3 GHz, GaN RF IMFET
Absolute Maximum Ratings1
Parameter
Rating Units
Breakdown Voltage (BVDG)
+150
V
Gate Voltage (VG)
-7 to +2
V
Drain Current (ID) Power Dissipation (PD)2 RF Input Power (RFIN)3
20
A
522
W
+49
dBm
Mounting Temperature (30 seconds)
320
°C
Storage Temperatur
Features
- Frequency: 2.9 to 3.3 GHz.
- Output Power (P3dB)1: 590 W.
- Linear Gain1: 15.5 dB.
- Typical DE3dB1: 69%.
- Operating Voltage: 50 V.
- Low thermal resistance package.
- Pulse capable Notes:
1. @ 3.1 GHz.
QPD1019-Qorvo.pdf
