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QPD1019 GaN RF IMFET

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Description

QPD1019 ® 500 W, 50 V, 2.9 * 3.3 GHz, GaN RF IMFET Product Overview The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEM.
Waffle Pack of 18 QPD1019 2. 3.

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Datasheet Specifications

Part number
QPD1019
Manufacturer
Qorvo
File Size
1.14 MB
Datasheet
QPD1019-Qorvo.pdf
Description
GaN RF IMFET

Features

* Frequency: 2.9 to 3.3 GHz
* Output Power (P3dB)1: 590 W
* Linear Gain1: 15.5 dB
* Typical DE3dB1: 69%
* Operating Voltage: 50 V
* Low thermal resistance package

Applications

* Military Radar
* Civilian Radar

QPD1019 Distributors

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