| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Qorvo | QPD1018EVB | QPD1018 2.7GHz to 3.1GHz 500W 50V GaN RF IMFET Evaluation Board - Bag (Alt: QPD1018EVB) | Avnet Americas | 0 | 0 |
$0
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QPD1018
qorvo
1.85 MB
Gan rf imfet.
QPD1018
500W, 50V, 2.7 * 3.1 GHz, GaN RF IMFET
Product Overview
The QPD1018 is a 500 W (P3dB) inter.
Tray of 18 QPD1018 Pack of 2 QPD1018 2.7 * 3.1 GHz EVB
Datasheet Rev. B, Aug 24, 2018 | Subject to .
📁 Related Datasheet
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30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched
discrete GaN on.
QPD1013 - GaN RF Transistor
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QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
General Description
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates fr.
QPD1019 - GaN RF IMFET
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QPD1019
®
500 W, 50 V, 2.9 – 3.3 GHz, GaN RF IMFET
Product Overview
The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEMT which .
QPD1003 - GaN RF IMFET
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500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
QPD1006 - RF IMFET
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450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
QPD1026L - GaN RF Input-Matched Transistor
(Qorvo)
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1300 W, 65 V, 420 – 450 MHz, GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT.
