QPD1011 - 7W GaN RF Input-Matched Transistor

Qorvo

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Datasheet Details

Part number: QPD1011
Manufacturer: Qorvo
File Size: 1.57 MB
Datasheet: QPD1011-Qorvo.pdf
Description: 7W GaN RF Input-Matched Transistor

QPD1011 Product details

Description

7” Short Reel. 100 Pieces 50. 1000 MHz EVB Datasheet Rev.E, March 2024 Subject to change without notice | All rights reserved - 1 of 23 - www.qorvo.com QPD1011 30. 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current, ID.

Features

Frequency: 30 to 1200 MHz.
Output Power (P3dB)1: 8.7 W.
Linear Gain1: 21 dB.
Typical PAE3dB1: 60 %.
Operating Voltage: 50 V.
CW and Pulse capable Note 1: @ 1 GHz Load Pull.

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GaN Input-Matched Transistor Qorvo

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