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QPD1011

7W GaN RF Input-Matched Transistor

QPD1011 Features

* Frequency: 30 to 1200 MHz

* Output Power (P3dB)1: 8.7 W

* Linear Gain1: 21 dB

* Typical PAE3dB1: 60 %

* Operating Voltage: 50 V

* CW and Pulse capable Note 1: @ 1 GHz Load Pull Applications

* Military radar

* Civilian radar

QPD1011 General Description

7” Short Reel

* 100 Pieces 50

* 1000 MHz EVB Datasheet Rev. E, March 2024 Subject to change without notice | All rights reserved - 1 of 23 - www.qorvo.com QPD1011 30

* 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Absolute Maximum Ratings1 Recommended Operating Co.

QPD1011 Datasheet (1.57 MB)

Preview of QPD1011 PDF

Datasheet Details

Part number:

QPD1011

Manufacturer:

Qorvo

File Size:

1.57 MB

Description:

7w gan rf input-matched transistor.
QPD1011 30

* 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched discret.

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QPD1011 GaN Input-Matched Transistor Qorvo

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