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QPD0050

RF Power Transistor

QPD0050 Features

* Operating Frequency Range: DC to 3.6 GHz

* Operating Drain Voltage: 48 V

* Maximum Output Power (PSAT): 82.8 W at 2.6 GHz

* Maximum Drain Efficiency: 78.5% at 2.6 GHz

* Efficiency-Tuned P3dB Gain: 19.4 dB at 2.6 GHz

* Surface Mount Plastic Package F

QPD0050 General Description

The QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD.

QPD0050 Datasheet (720.78 KB)

Preview of QPD0050 PDF

Datasheet Details

Part number:

QPD0050

Manufacturer:

TriQuint Semiconductor

File Size:

720.78 KB

Description:

Rf power transistor.
Applications

* W-CDMA / LTE

* Macrocell Base Station Driver

* Microcell Base Station

* Small Cell Final Stage

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QPD0050 Power Transistor TriQuint Semiconductor

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