QPD0305 Dual GaN RF Transistor

Qorvo

Description

QPD0305 ® 2x20 W, 48 V, 3.4 * 3.8 GHz, Dual GaN RF Transistor Product Overview The QPD0305 is a dual-path GaN power amplifier in a DFN packag.
2 Pieces 5 Pieces 25 Pieces 7” Reel. 100 Pieces Short Reel. 500 Pieces 13” Reel. 2500 Pieces 1 of 9 www.

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Datasheet Specifications

Part number: QPD0305
Manufacturer: Qorvo
File Size: 1.25 MB
Datasheet: QPD0305-Qorvo.pdf
Description: Dual GaN RF Transistor

Features

* Operating Frequency Range: 3.4
* 3.8 GHz
* Operating Drain Voltage: +48 V
* Maximum Output Power (P3dB): 25.1 W (1)
* Maximum Drain Efficiency: 79.4% (1)
* Efficiency-Tuned P3dB Gain: 18.9 dB (1)
* 7 x 6.5 mm DFN Package Notes: 1. Single-path

Applications

* WCDMA / LTE
* Macrocell Base Station Driver
* Microcell Base Station
* Small Cell
* Active Antenna
* 5G Massive MIMO
* Symmetric Doherty Applications Data Sheet Rev. B, Dec 14, 2018 | Subject to change without notice. Ordering Information

QPD0305 Distributors

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QPD0305 Dual GaN Transistor Qorvo

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