QPD0305 - Dual GaN RF Transistor

Qorvo

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Datasheet Details

Part number: QPD0305
Manufacturer: Qorvo
File Size: 1.25 MB
Datasheet: QPD0305-Qorvo.pdf
Description: Dual GaN RF Transistor

QPD0305 Product details

Description

2 Pieces 5 Pieces 25 Pieces 7” Reel 100 Pieces Short Reel 500 Pieces 13” Reel 2500 Pieces 1 of 9 www.qorvo.com QPD0305 ® 2x20 W, 48 V, 3.4 3.8 GHz, Dual GaN RF Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Breakdown Voltage (BVDG) +165 V Gate Voltage Range (VG1,2) 7 to +2 V Drain Voltage (VD1,2) +55 V Peak RF Input Power 36 dBm VSWR Mismatch, P1dB Pulse (20% Duty Cycle, 100 µs Width), T = +

Features

Operating Frequency Range: 3.4.
3.8 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (P3dB): 25.1 W (1).
Maximum Drain Efficiency: 79.4% (1).
Efficiency-Tuned P3dB Gain: 18.9 dB (1).
7 x 6.5 mm DFN Package Notes: 1. Single-path load pull data at 3.6 GHz. Functional Block Diagram.

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Dual GaN Transistor Qorvo

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