* Operating Frequency Range: 3.4
* 3.8 GHz
* Operating Drain Voltage: +48 V
* Maximum Output Power (P3dB): 25.1 W (1)
* Maximum Drain Efficiency: 79.4% (1)
* Efficiency-Tuned P3dB Gain: 18.9 dB (1)
* 7 x 6.5 mm DFN Package Notes: 1. Single-path
QPD0305
Qorvo
1.25 MB
Dual gan rf transistor.
QPD0305 ® 2x20 W, 48 V, 3.4 3.8 GHz, Dual GaN RF Transistor Product Overview The QPD0305 is a dual-path GaN power amplifier in a DFN packag.
📁 Related Datasheet
QPD0005M GaN RF Transistor (Qorvo)
QPD0012 Asymmetric Doherty (Qorvo)
QPD0030 RF Power Transistor (TriQuint Semiconductor)
QPD0030 GaN RF Power Transistor (qorvo)
QPD0050 RF Power Transistor (TriQuint Semiconductor)
QPD1003 GaN RF IMFET (Qorvo)
QPD1006 RF IMFET (Qorvo)
QPD1011 7W GaN RF Input-Matched Transistor (Qorvo)
QPD1013 GaN RF Transistor (Qorvo)
QPD1018 GaN RF IMFET (qorvo)
