Part number:
QPD1003
Manufacturer:
Qorvo
File Size:
1.07 MB
Description:
Gan rf imfet.
QPD1003
500W, 50V, 1.2
* 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Qorvo | QPD1003 | RF TRANSISTOR | DigiKey | 0 | 18 units |
$1280.61
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🛒 Buy Now |
QPD1003
Qorvo
1.07 MB
Gan rf imfet.
QPD1003
500W, 50V, 1.2
* 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
* Frequency: 1.2 to 1.4 GHz
* Output Power (P3dB)1: 540 W
* Linear Gain1: 19.9 dB
* Typical PAE3dB1: 66.7%
* Operating Voltage: 50 V
* Low thermal resistance package
* Pulse capable Note 1: @ 1.3 GHz Applications
* Military radar
📁 Related Datasheet
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(Qorvo)
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Product Overview
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QPD1011 - 7W GaN RF Input-Matched Transistor
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Product Overview
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discrete GaN on.
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(Qorvo)
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General Description
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates fr.
QPD1018 - GaN RF IMFET
(qorvo)
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Product Overview
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QPD1019 - GaN RF IMFET
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®
500 W, 50 V, 2.9 – 3.3 GHz, GaN RF IMFET
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QPD1026L - GaN RF Input-Matched Transistor
(Qorvo)
QPD1026L
1300 W, 65 V, 420 – 450 MHz, GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT.
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Qorvo
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| QPD1003 |
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GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN
|
| Mouser Electronics |
| 16 In Stock |
| Qty : 1 units |
|
Unit Price : $1215.24
|
| 🛒 Buy Now |
