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QPD1003 GaN RF IMFET

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Description

QPD1003 500W, 50V, 1.2 * 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
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Datasheet Specifications

Part number
QPD1003
Manufacturer
Qorvo
File Size
1.07 MB
Datasheet
QPD1003-Qorvo.pdf
Description
GaN RF IMFET

Features

* Frequency: 1.2 to 1.4 GHz
* Output Power (P3dB)1: 540 W
* Linear Gain1: 19.9 dB
* Typical PAE3dB1: 66.7%
* Operating Voltage: 50 V
* Low thermal resistance package

Applications

* Military radar

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