Part number:
QPD1003
Manufacturer:
Qorvo
File Size:
1.07 MB
Description:
Gan rf imfet.
QPD1003 500W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
* Frequency: 1.2 to 1.4 GHz
* Output Power (P3dB)1: 540 W
* Linear Gain1: 19.9 dB
* Typical PAE3dB1: 66.7%
* Operating Voltage: 50 V
* Low thermal resistance package
* Pulse capable Note 1: @ 1.3 GHz Applications
* Military radar
QPD1003
Qorvo
1.07 MB
Gan rf imfet.
QPD1003 500W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
📁 Related Datasheet
QPD1006 RF IMFET (Qorvo)
QPD1011 7W GaN RF Input-Matched Transistor (Qorvo)
QPD1013 GaN RF Transistor (Qorvo)
QPD1018 GaN RF IMFET (qorvo)
QPD1019 GaN RF IMFET (Qorvo)
QPD1026L GaN RF Input-Matched Transistor (Qorvo)
QPD0005M GaN RF Transistor (Qorvo)
QPD0012 Asymmetric Doherty (Qorvo)
QPD0030 RF Power Transistor (TriQuint Semiconductor)
QPD0030 GaN RF Power Transistor (qorvo)
