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QPD1026L

GaN RF Input-Matched Transistor

QPD1026L Features

* Frequency: 420 to 450 MHz

* Output Power (P3dB)1: 1318 W

* Linear Gain1: 25.9 dB

* Typical PAE3dB1: 80.8 %

* Operating Voltage: 65 V

* CW and Pulse capable Note 1: @ 440 MHz Load Pull Applications

* UHF Radar

* Amateur Radio

QPD1026L General Description

420

* 450 MHz Transistor 432

* 460 MHz Evaluation Board Datasheet Rev. B March 2024 │ Subject to change without notice - 1 of 19- www.qorvo.com QPD1026L 1300 W, 65 V, 420

* 450 MHz, GaN RF Input-Matched Transistor Absolute Maximum Ratings 1, 2, 3 Recommended Operating C.

QPD1026L Datasheet (1.85 MB)

Preview of QPD1026L PDF

Datasheet Details

Part number:

QPD1026L

Manufacturer:

Qorvo

File Size:

1.85 MB

Description:

Gan rf input-matched transistor.
QPD1026L 1300 W, 65 V, 420

* 450 MHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on .

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QPD1026L GaN Input-Matched Transistor Qorvo

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