QPD1026L Datasheet - Qorvo

QPD1026L GaN RF Input-Matched Transistor

420 * 450 MHz Transistor 432 * 460 MHz Evaluation Board Datasheet Rev. B March 2024 │ Subject to change without notice - 1 of 19- www.qorvo.com QPD1026L 1300 W, 65 V, 420 * 450 MHz, GaN RF Input-Matched Transistor Absolute Maximum Ratings 1, 2, 3 Recommended Operating C.

QPD1026L 1300 W, 65 V, 420 450 MHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public safety radio and radiolocation service. The device can support both CW and pulsed operations. RoHS comp.

QPD1026L Features

* Frequency: 420 to 450 MHz

* Output Power (P3dB)1: 1318 W

* Linear Gain1: 25.9 dB

* Typical PAE3dB1: 80.8 %

* Operating Voltage: 65 V

* CW and Pulse capable Note 1: @ 440 MHz Load Pull Applications

* UHF Radar

* Amateur Radio

QPD1026L-Qorvo.pdf

QPD1026L Datasheet Preview — Preview of QPD1026L PDF

Datasheet Details

Part number:

QPD1026L

Manufacturer:

Qorvo

File Size:

1.85 MB

Description:

Gan rf input-matched transistor.

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QPD1026L QPD1026L GaN Input-Matched Transistor Qorvo

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