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QPD0030 Datasheet - TriQuint Semiconductor

RF Power Transistor

QPD0030 Features

* Operating Frequency Range: DC to 4 GHz

* Operating Drain Voltage: 48 V

* Maximum Output Power (PSAT): 49 W

* Maximum Drain Efficiency: 72.5%

* Efficiency-Tuned P3dB Gain: 21.7 dB

* Surface Mount Plastic Overmold package Functional Block Diagram Gen

QPD0030 General Description

The QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD.

QPD0030 Datasheet (461.67 KB)

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Datasheet Details

Part number:

QPD0030

Manufacturer:

TriQuint Semiconductor

File Size:

461.67 KB

Description:

Rf power transistor.
Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage .

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QPD0030 Power Transistor TriQuint Semiconductor

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