QPD0030 Datasheet - qorvo

QPD0030 GaN RF Power Transistor

Short Reel * 100 Pieces 7” Reel * 500 pieces 1.2 * 1.4 GHz Evaluation Board 1.8 * 2.2 GHz Evaluation Board 1 of 12 www.qorvo.com QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Parameter Rating Breakdown Voltage (BVDG) +16.

QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 c.

QPD0030 Features

* Operating Frequency Range: DC to 5 GHz

* Operating Drain Voltage: +48 V

* Maximum Output Power (PSAT): 49.0 W (1)

* Maximum Drain Efficiency: 71.9% (1)

* Efficiency-Tuned P3dB Gain: 22.1 dB (1)

* Surface Mount Plastic Package Functional Block Diagra

QPD0030-qorvo.pdf