QPD0030 - GaN RF Power Transistor

qorvo

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Datasheet Details

Part number: QPD0030
Manufacturer: qorvo
File Size: 1.04 MB
Datasheet: QPD0030-qorvo.pdf
Description: GaN RF Power Transistor

QPD0030 Product details

Description

Short Reel 100 Pieces 7” Reel 500 pieces 1.2 1.4 GHz Evaluation Board 1.8 2.2 GHz Evaluation Board 1 of 12 www.qorvo.com QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Parameter Rating Breakdown Voltage (BVDG) +165 V Gate Voltage Range (VG) 7 to +2 V Drain Voltage (VD) +55 V Peak RF Input Power 33 dBm VSWR Mismatch, P1dB Pulse (20% Duty Cycle, 100 µs Width), T = +25°C 10:1 Storage Temperature

Features

Operating Frequency Range: DC to 5 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (PSAT): 49.0 W (1).
Maximum Drain Efficiency: 71.9% (1).
Efficiency-Tuned P3dB Gain: 22.1 dB (1).
Surface Mount Plastic Package Functional Block Diagram Notes: 1. Load pull performance at 2.2 GHz.

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