QPD0030 Datasheet - qorvo

QPD0030, GaN RF Power Transistor

QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o.
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Datasheet Details

Part number:

QPD0030

Manufacturer:

qorvo

File Size:

1.04 MB

Description:

GaN RF Power Transistor

Features

* Operating Frequency Range: DC to 5 GHz
* Operating Drain Voltage: +48 V
* Maximum Output Power (PSAT): 49.0 W (1)
* Maximum Drain Efficiency: 71.9% (1)
* Efficiency-Tuned P3dB Gain: 22.1 dB (1)
* Surface Mount Plastic Package Functional Block Diagra

Applications

* and can support both CW and pulsed mode of operations. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier. Th

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