Asymmetric Datasheet | Specifications & PDF Download

AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS s P

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AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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DK87xxAD series Asymmetric Half-Bridge AC-DC Power Converter with HB GaN FET Integrated  General Description The DK87xxAD is an AC-DC power converter

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DK87xxAD series Asymmetric Half-Bridge AC-DC Power Converter with HB GaN FET Integrated  General Description The DK87xxAD is an AC-DC power converter

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XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS s P

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XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS s P

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AON6992 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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AON6998 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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AON6982 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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YANGZHOU POSITIONING TECH. CO., LTD PSTATA644S28 Asymmetric thyristors Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blo

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YANGZHOU POSITIONING TECH. CO., LTD Asymmetric thyristors Blocking - Off State VDRM (1) VDSM (1) VRRM (1) 2800 2800 30 VRSM(1) 30 VRRM = Repet

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www.DataSheet.co.kr ACR44U ACR44U Fast Turn-off Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4222-3.4 DS4222-4.0 January

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DK87xxAD series Asymmetric Half-Bridge AC-DC Power Converter with HB GaN FET Integrated  General Description The DK87xxAD is an AC-DC power converter

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