Asymmetric Datasheet | Pinout, Features, Price Comparison & PDF

AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

AON6982 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General Description The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET

AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

AON6992 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

DK87xxAD series Asymmetric Half-Bridge AC-DC Power Converter with HB GaN FET Integrated  General Description The DK87xxAD is an AC-DC power converter

AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

DK87xxAD series Asymmetric Half-Bridge AC-DC Power Converter with HB GaN FET Integrated  General Description The DK87xxAD is an AC-DC power converter

VS3625DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET Features  Dual Asymmetric N-Channel  VitoMOS® Ⅱ Technology  100% Avalanche Tested,100

DK87xxAD series Asymmetric Half-Bridge AC-DC Power Converter with HB GaN FET Integrated  General Description The DK87xxAD is an AC-DC power converter

sales.Mr.wang13826508770 www.sztssd.com JW1556 Asymmetrical Half-Bridge Flyback Controller DESCRIPTION FEATURES JW1556 is an asymmetrical half-bri

AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

HM40SDN02Q HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET  Features  Pin configuration VDS VGS RDSON Typ. ID Top view 5.2mR@

AONH36334 30V Dual Asymmetric N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Ch

XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS s P

XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS s P

XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS s P