Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RDS(ON) at 4.5V Vgs
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free pliant
Applications
- DC/DC Converters in puter
- See Note I
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 Q2 30V 30V
32A 32A < 6.1mΩ < 3.8mΩ < 9.6mΩ < 4.7mΩ
100% UIS Tested 100% Rg Tested
Top View
DFN 5X6B
S2 PIN1
Bottom View S2 G2
S2
(S1/D2)
D1
G1
D1
D1 D1
PIN1
Top View
Bottom View
Orderable Part Number
Package...