Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RDS(ON)
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 30V
49A <5.3mΩ <9.1mΩ
Q2 30V
85A <2.6mΩ <3.5mΩ
Applications
- DC/DC Converters in puting
- POL in Tele and Industrial
100% UIS Tested 100% Rg Tested
Top View
DFN 5X6D S2
Pin 1
Bottom View G2
S1/D2
G1
D1 Pin 1
Top View
Bottom View
Orderable Part Number
Package Type
DFN...