R024 Datasheet | Specifications & PDF Download

IPW60R024P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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• Lead-Free PD - 95066A IRFR024NPbF IRFU024NPbF www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF

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Schottky Barrier Diode NSR0240H Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wid

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1/4-inch 2 MP CMOS Digital Image Sensor AR0246 General Description The onsemi AR0246 is a stacked 1/4−inch back side illuminated (BSI) CMOS active−pi

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CR022 SERIES Current Regulator Diodes The CR022 Series is a family of precision current regulators designed for demanding appli.cations in test equip

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PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanc

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Public IPW60R024CM8 Final datasheet MOSFET 600V CoolMOS™ CM8 Power Transistor Built on Infineon’s world‑class super‑junction MOSFET platform with an

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NSR0240V2T1G, NSVR0240V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current an

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Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche A

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NSR0240V2, NSVR0240V2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are

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isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche te

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Schottky Barrier Diode NSR0240P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wi

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www.vishay.com IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D GS GD S D G S N-Channel MOSFE

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AUTOMOTIVE GRADE PD - 96355 Features l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance D

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isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·Enhancement mode: ·100% avalanche te

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NSR0240MX Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a w

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PD- 91363E IRLR024N IRLU024N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Proc

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PD - 95825A AUTOMOTIVE MOSFET IRLR024Z IRLU024Z HEXFET® Power MOSFET D Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-R

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IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (n

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